Chamber with vertical support stem for symmetric conductance and rf delivery

ABSTRACT

A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.

CLAIM OF PRIORITY

The present patent application is a continuation of and claims thebenefit of and priority, under 35 U.S.C. § 120, to U.S. patentapplication Ser. No. 16/039,229, filed on Jul. 18, 2018, and titled“Chamber With Vertical Support Stem for Symmetric Conductance and RFDelivery”, which claims the benefit of and priority, under 35 U.S.C. §120, to U.S. patent application Ser. No. 15/068,508, filed on Mar. 11,2016, titled “Chamber With Vertical Support Stem for SymmetricConductance and RF Delivery”, and now issued as U.S. Pat. No.10,049,862, which claims the benefit of and priority, under 35 U.S.C. §119(e), to U.S. Provisional Patent Application No. 62/149,493, filed onApr. 17, 2015, and titled “Chamber With Vertical Support Stem forSymmetric Conductance and RF Delivery”, all of which are incorporated byreference herein in their entirety for all purposes.

FIELD

The present embodiments relate to a symmetric chamber design thatenables symmetric conductance and symmetric delivery of radio frequency(RF) to a chuck.

BACKGROUND

A plasma system includes a plasma chamber and one or more radiofrequency (RF) generators. The one or more RF generators supply power tothe plasma chamber to form plasma within the plasma chamber. The RFpower is supplied via an impedance matching circuit and an RFtransmission line. The plasma and/or materials remaining in the plasmachamber are removed using a pump. The plasma is used to process a wafer.

The arrangement of components in the plasma system, if not appropriate,results in irregular processing of the wafer. Moreover, the removal ofthe materials and/or plasma, if not done properly, negatively affectsthe processing of the wafer.

It is in this context that embodiments described in the presentdisclosure arise.

SUMMARY

Embodiments of the disclosure provide apparatus, methods and computerprograms for providing a high conductance chamber with radio frequency(RF) symmetry. It should be appreciated that the present embodiments canbe implemented in numerous ways, e.g., a process, an apparatus, asystem, a piece of hardware, or a method on a computer-readable medium.Several embodiments are described below.

With an increase in a size of a wafer, e.g., from 300 millimeter (mm) to450 mm, there is an increase in a size of a plasma chamber that is usedto hold and process the wafer. Examples of processing the wafer includeetching the wafer, depositing monomers or polymers on the wafer,cleaning the wafer, sputtering the wafer, etc. The plasma chamber isincreased in size to increase a conductance of remnant materials, e.g.,etch materials, plasma, deposition materials, etc., from the plasmachamber to outside the plasma chamber and to accommodate the wafer.

In some embodiments, the plasma chamber is of a large inner diameterwith provisions for multiple vacuum pumps to be mounted at a base of theplasma chamber and has a centrally mounted pedestal, e.g., cathode,chuck, lower electrode, etc. The inner diameter is larger than that usedto process a wafer of 300 mm Generally, an inner surface of a side wallof the plasma chamber is cylindrical, but an outer surface of side wallis of other shapes, e.g., square or rectangular, etc. The inner diameterof the plasma chamber and an outer diameter of the pedestal are chosento maximize flow conductance between a plane of the wafer and a bottomsurface of the plasma chamber.

With the increase in the size of the plasma chamber, it is moredifficult to process the wafer uniformly. In some embodiments, RF poweris symmetrically provided to the wafer for striking plasma ormaintaining plasma within the plasma chamber. For example, the RF poweris symmetrically provided by arranging an RF rod around a center axisthat passes via a center of a lower electrode. To illustrate, the RF rodis not bent to reduce chances of reducing symmetry of conductance of theremnant materials from the plasma chamber to outside the plasma chamber.Moreover, after or during processing of the wafer, the remnant materialsare removed from the plasma chamber in a symmetric fashion. Such removalfacilitates uniformity in processing of the wafer. The removal isfacilitated by placing the vacuum pumps symmetric with respect to thecenter axis.

In various embodiments, the RF rod that is centrally mounted includesprovisions for other facilities, e.g. electrostatic chuck (ESC) coolingfluid, thermocouple direct current (DC) voltage, helium delivery, ESCheater power, etc., to be delivered to the pedestal.

In some embodiments, a symmetry of flow of the remnant materials in theplasma chamber, also sometimes referred as conductance or pumpingsymmetry, is provided along with symmetry delivery of RF power to thewafer within the plasma chamber. The systems and methods, describedherein, increase conductance at a plane, e.g., top surface, etc., of thewafer while also improving a symmetry of conductance and at the sametime creating a symmetric RF feed structure that enables a symmetricdelivery of RF power to the wafer.

In various embodiments, a drive mechanism is provided to move thepedestal and the RF rod in a vertical direction to vary a position ofthe wafer at different times in a processing sequence. In oneembodiment, the drive mechanism is a linear drive mechanism that allowsfor vertical movement of a vertical support stem. The movement up ordown is to load and unload the wafer or to change a height of thepedestal during processing of the wafer.

In some embodiments, the plasma chamber, in some embodiments, includes agrid, e.g., a shield, etc., to separate a process region between thepedestal and an upper electrode from a cylindrical region, e.g., space,etc., around the pedestal that creates a conductance path from theprocess region of the plasma chamber to the cylindrical region. A sizeof openings in the grid is selected to set or adjust conductance betweenthe process region and the cylindrical region.

Some advantages of the herein described systems and methods includeproviding a symmetric RF delivery to the pedestal and also a symmetricconductance of the remnant materials from the plasma chamber. Additionaladvantages of the herein described systems and methods includecontrolling the movement of the pedestal and the RF rod in the verticaldirection. The movement in the vertical direction facilitatesachievement of symmetry in conductance and symmetry in the delivery ofRF power to the pedestal. The symmetric RF delivery and the symmetry inconductance facilitate achieving uniformity in the processing of thewafer.

Other aspects will become apparent from the following detaileddescription, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments are understood by reference to the following descriptiontaken in conjunction with the accompanying drawings.

FIG. 1A is a side view of an embodiment of a plasma system.

FIG. 1B is a diagram to illustrate a grid placed between a lowerelectrode and an inner diameter of a plasma chamber.

FIG. 1C is a side view of an embodiment of a plasma chamber toillustrate different conductance regions within the plasma chamber andvarious parameters that affect the conductance.

FIG. 2A is a diagram to illustrate how a diameter of the plasma chamber,an outer diameter of a cathode, and a height of the plasma chamber arechanged to increase conductance within the plasma chamber.

FIG. 2B is a top view of an embodiment of the plasma chamber toillustrate conductance in a region within the plasma chamber.

FIG. 3A is a diagram to illustrate a vertical mount of a chuck supportcolumn into the plasma chamber.

FIG. 3B is an embodiment of a pressure map to illustrate uniformity inpressure at a top surface of a wafer W placed within the plasma chamber.

FIG. 3C is an embodiment of a pressure map to illustrate uniformity inpressure at a pre-determined distance above the wafer.

FIG. 4 is a graph to illustrate that one or more pumps are used toremove plasma and/or remnants of a plasma process from the plasmachamber.

FIG. 5A is a top view of an embodiment of the plasma system toillustrate use of the chuck support column without a baffle.

FIG. 5B is an embodiment of a pressure plot at a top surface of thewafer when the baffle is not used in the plasma system.

FIG. 5C is an embodiment of a pressure plot at a pre-determined distancefrom the top surface of the wafer when the baffle is not used in theplasma system.

FIG. 5D is a top view of an embodiment of the plasma system toillustrate use of the chuck support column with the baffle.

FIG. 5E is an embodiment of a pressure plot at the top surface of thewafer when the baffle is used in the plasma system.

FIG. 5F is an embodiment of a pressure plot at the pre-determineddistance from the top surface of the wafer when the baffle is used inthe plasma system.

FIG. 5G is a top view of an embodiment of the plasma system toillustrate use of the chuck support column with another baffle.

FIG. 5H is an embodiment of a pressure plot at the top surface of thewafer when the other baffle is used in the plasma system.

FIG. 5I is an embodiment of a pressure plot at the pre-determineddistance from the top surface of the wafer when the other baffle is usedin the plasma system.

FIG. 5J is an isometric view of a baffle to illustrate control of thebaffle by a processor.

FIG. 6 is an embodiment of a graph to illustrate an amount of control ofconductance of a gas from the plasma chamber to outside the plasmachamber with and without use of a poppet valve.

FIG. 7A is an isometric view of an embodiment of a plasma system toillustrate that the chuck support column is inserted via an openingformed within an inner bottom surface of a transition flange to bewithin an inside volume surrounded by a side wall of the plasma chamber.

FIG. 7B is a side view of an embodiment of a plasma system to illustratefitting of the side wall around the chuck support column and fitting ofa bowl-shaped structure.

FIG. 7C is a side view of an embodiment of a plasma system to illustratefitting of an upper electrode system to the side wall.

FIG. 8A is an isometric view of an embodiment of the side wall.

FIG. 8B is an isometric view of an embodiment of the transition flange.

FIG. 9 is an isometric view of the side wall and the transition flangefitted with each other.

FIG. 10A is a side view of an embodiment of the chuck support columnthat is vertically mounted into the plasma chamber from a bottom portionof the plasma chamber.

FIG. 10B is an embodiment of a graph to illustrate that with a use ofthe chuck support column that is vertically symmetric with respect to acenter axis, etch rate is more uniform compared to a cantilevered stemsupport.

FIG. 11 is a diagram of an embodiment of a plasma system to illustrate asymmetric radio frequency (RF) supply path and a symmetric RF returnpath.

FIG. 12 is a diagram of an embodiment of the plasma system of FIG. 11 toillustrate a transport position of the lower electrode during loading ofthe wafer onto the lower electrode.

FIG. 13 is a diagram of an embodiment of the plasma system of FIG. 11 toillustrate a position of the lower electrode during processing of thewafer.

DETAILED DESCRIPTION

The following embodiments describe systems and methods for providing ahigh conductance chamber with radio frequency (RF) symmetry. A verticalarrangement of a chuck support column and an RF rod within the chucksupport column allows for symmetric conductance, e.g., flow, etc.,around a lower electrode. The vertical arrangement of the RF rod alsoallows for symmetric RF delivery to the lower electrode. Additionally,in some embodiments, one or more pumps are arranged under and around thechuck support column to provide for more efficient and symmetric pumpingto achieve the symmetric conductance. In various embodiments, bafflesare added to control and achieve the symmetric conductance. It will beapparent that the present embodiments may be practiced without some orall of these specific details. In other instances, well known processoperations have not been described in detail in order not tounnecessarily obscure embodiments of the systems and methods.

FIG. 1A is a diagram of an embodiment of a plasma system 10 having aplasma chamber 11. The plasma system 10 includes an upper electrodeassembly 12. In some embodiments, the upper electrode assembly 12 isselected to be a capacitively coupled electrode, e.g., a parallel plate,an upper electrode, etc., or an inductively coupled electrode, e.g., oneor more coils, etc., for transferring radio frequency (RF) signal to theplasma chamber 11. An advantage of the plasma chamber 11 is thatdifferent upper electrode systems, e.g. capacitive, inductive, etc., arecoupled at different times to a side wall 14 of the plasma chamber 11.The side wall 14 surrounds an enclosure 25, which is a volume enclosedby the side wall 14. The plasma chamber 11 further includes a transitionflange 16, a baffle 18A, and a baffle 18B. Located below eachcorresponding baffle 18A and 18B, is a pump 20A and a pump 20B. Theplasma chamber 11 also includes a lower electrode 22, a dielectric 24,and a radio frequency (RF) rod 30. Included within the plasma system 10is a bowl-shaped structure 29A, a chuck support column 29B, an RF rod28, an RF sheath 31 surrounding the RF rod 28, an impedance matchingnetwork 43, one or more RF generators 51, a motor drive assembly 45, alinear rail 47, and a supply 49. In some embodiments, a combination ofthe motor drive assembly 45 and the linear rail 47 is referred to hereinas a linear drive assembly.

The RF rod 30 extends via a hollow space 33 formed within the chucksupport column 29B. The hollow space 33 is surrounded by an innersurface of the chuck support column 29B. The RF sheath 31 and the RF rod28 together form an RF transmission line. The RF rod 28 is separatedfrom the RF sheath 31 via an insulator. The RF rods 28 and 30 are madeof a conductive material to transfer a modified RF signal. The insulatorbetween the RF sheath 31 and the RF rod 28 insulates an RF signaltransferred via the RF rod 28 from an RF signal transferred via the RFsheath 31. In some embodiments, the RF rod 28 is connected to the RF rod30 via an electrical connection, and the RF rod 30 is connected to thelower electrode 22 via an electrical connection. In some embodiments, anelectrical connection point includes a conductive joining surface, aconductive clamp, a conductive glue, an RF strap, a tape, or anotherconnector.

The bowl-shaped structure 29A is fitted to the chuck support column 29Bvia a coupling mechanism, e.g., bolts, screws, nuts, etc. The chucksupport column 29B is fitted, e.g., bolted, attached, etc., to thebowl-shaped structure 29A to support the bowl-shaped structure 29A. Thebowl-shaped structure 29A is attached to the dielectric 24, whichsupports the lower electrode 22. Moreover, the lower electrode 22 issupported by the RF rod 30. Also, in various embodiments, the lowerelectrode 22 is symmetrically placed with respect to a center axis 1002.For example, the lower electrode 22 is coaxial and concentric withrespect to the center axis 1002. The dielectric 24 is made of aninsulator material, e.g., ceramic, etc.

In some embodiments, the bowl-shaped structure 29A is fitted within theplasma chamber 11 after being transported via a top opening of theplasma chamber 11. The top opening is formed when the upper electrodeassembly 12 is not placed on top of the side wall 14 to be fitted, e.g.,bolted, attached, etc., to the side wall 14. Moreover, a portion of thechuck support column 29B is received within the plasma chamber 11 from abottom opening formed within the transition flange 16. The transitionflange 16 is attached, e.g., fitted to, bolted to, etc., a bottomsurface 17 of the side wall 14 and the upper electrode assembly 12 isattached to a top surface 19 of the side wall 14. The top surface 19 islocated on an opposite end of the side wall 14 compared to the bottomsurface 17.

Examples of the one or more RF generators 51 include an x megahertz(MHz) RF generator, a y MHz RF generator, and a z MHz RF generator. Thex MHz RF generator is a 400 kilohertz (kHz) RF generator or a 2 MHz RFgenerator. The y MHz RF generator is a 27 MHz RF generator and the z MHzRF generator is a 60 MHz RF generator. The impedance matching network 43includes one or more resistors, one or more capacitors, and one or moreinductors. In some embodiments, the impedance matching network 43includes one or more capacitors and one or more inductors.

A portion 44A of the RF rod 30 has a shape that is similar to a shape ofthe bowl-shaped structure 29A. For example, the portion 44A is alsobowl-shaped and has an upper bowl side 55A and a lower bowl side 55B.The upper bowl side 55A has a rim 57. The similarity in shapes betweenthe portion 44A and the bowl-shaped structure 29A allows reduction inmismatch between impedances of an RF supply path and an RF return path,both of which are described below. Moreover, a hollow space within theRF rod 30 has an increased diameter at the portion 44A compared to aportion 44B of the RF rod 30, and the increase in diameter allows forvarious supply lines, e.g., gas supply lines for heating and cooling thelower electrode 22, thermocouple lines for measuring a temperature ofthe lower electrode 22, alternating current (AC) supply lines forproviding AC power to heat the lower electrode 22, etc., to be packagedinside the hollow space. The portion 44B, as illustrated in FIG. 1, is apart of a column-shaped portion 44C of the RF rod 30.

The lower electrode 22 is made of a metal, e.g., anodized aluminum,alloy of aluminum, etc. Also, the upper electrode is made of a metal,e.g., aluminum, alloy of aluminum, etc. The upper electrode is locatedopposite to and facing the lower electrode 22. The supply 49 includesone or more storage containers for storing one or more fluids forcooling the lower electrode 22, one or more fluids for heating the lowerelectrode 22, etc.

The motor drive assembly 45 includes a driver, e.g., one or moretransistors, etc., and a motor. The driver is provided a signal from aprocessor of a host computer system, which is further described below.As used herein, a processor is an application specific integratedcircuit (ASIC), or a programmable logic device (PLD), or amicroprocessor, or a controller. Upon receiving the signal, the drivergenerates a current signal to provide to a stator of the motor. A rotorof the motor rotates when the stator receives the current signal. Aconnection mechanism 53, e.g., one or more rods, one or more rodsconnected to each other via a gear mechanism, etc., is connected to therotor and moves with the rotation of the rotor. The movement of theconnection mechanism 53 moves the linear rail 47 in a vertical directionwith respect to a stationary support, further described below. Themovement of the linear rail 47 in the vertical direction moves thebowl-shaped structure 29A, the chuck support column 29B, the RF rod 30,and the lower electrode 22 in the vertical direction with respect to theupper electrode assembly 12 to change a gap between the lower electrode22 and the upper electrode assembly 12. A wafer is placed in the gap forprocessing, e.g., etching, depositing materials on, cleaning,sputtering, etc.

The one or more RF generators 51 generate corresponding one or more RFsignals, which are modified by the impedance matching network 43 togenerate the modified RF signal. For example, the impedance matchingnetwork 43 matches an impedance of a load, e.g., the RF transmissionline, the plasma chamber 11, etc., connected to an output of theimpedance matching network 43 with that of a source, e.g., the one ormore RF generators 51, corresponding one or more RF cables connectingthe one or more RF generators 51 to the impedance matching network 43,etc., connected to an input of the impedance matching network 43. Themodified signal is sent via the RF rod 28 of the RF transmission line tothe RF rod 30, and is sent further from the RF rod 30 to the lowerelectrode 22.

The RF rod 28, the RF rod 30, and the lower electrode 22 form the RFsupply path for supplying the modified RF signal to the lower electrode22. The RF rod 30, which is not bent and is vertical throughout itslength provides for symmetric delivery of the modified RF signal to thelower electrode 22. It should be noted that the portion 44B of the RFrod 30 within the plasma chamber 11 has a vertical, e.g., nothorizontal, not bent, etc., orientation. The vertical orientation of theportion 44B of the RF rod 30 facilitates an unobstructed delivery of RFpower of the modified RF signal to the lower electrode 22. The deliveryof the modified RF signal is symmetric with respect to the central axis1002, which, in some embodiments, is a center axis of the RF rod 30. Forexample, the center axis 1002 passes through a centroid of the RF rod30. As another example, the RF rod 30 is coaxial with respect to thecenter axis 1002.

Moreover, conductance, which is a flow of remnant materials, e.g., etchbyproducts, reactant gases, deposition byproducts, cleaning byproducts,etc., and/or plasma in the plasma chamber 11, is symmetric around thelower electrode 22 when the chuck support column 29B and the bowl-shapedstructure 29A are symmetric with respect to the center axis 1002. Forexample, the chuck support column 29B is coaxial with respect to thecenter axis 1002 and the bowl-shaped structure 29A is coaxial withrespect to the center axis 1002. To further illustrate, the center axis1002 passes through a centroid of the chuck support column 29B and acentroid of the bowl-shaped structure 29A.

In some embodiments, the chuck support column 29B does not impedeconductance of the remnant materials and/or plasma from the lowerelectrode 22 to the vacuum pumps 20A and 20B. For example, acantilevered stem support that is bent within the plasma chamber 11 andis fitted via the side wall 14, e.g., an outside side surface 21 of theside wall 14, etc., hinders conductance of the remnant materials to thevacuum pumps 20A and 20B. The side surface 21 forms an angle, e.g., 90degrees, between 85 degrees and 95 degrees, etc., with respect to thetop surface 19 and the bottom surface 17. Comparatively, the chucksupport column 29B that is vertical, is not bent within the plasmachamber 11, and is not fitted within the plasma chamber 11 via the sidewall 14 does not hinder conductance of remnant materials and/or plasmato the vacuum pumps 20A and 20B.

In various embodiments, the vacuum pumps 20A and 20B are arrangedsymmetric with respect to the center axis 1002. For example, the vacuumpump 20A is located at the same distance from the center axis 1002 asthat of the vacuum pump 20B from the center axis 1002. As anotherexample, the vacuum pumps 20A and 20B are located concentric to thecenter axis 1002 so that the center axis 1002 passes through a centroidof a volume that encompasses the vacuum pumps 20A and 20B. In someembodiments, the vacuum pump 20A is located at a distance from thecenter axis 1002 and the distance is within a pre-determined thresholdof a distance of the vacuum pump 20B from the center axis 1002. Thesymmetric arrangement of the vacuum pumps 20A and 20B facilitatesachieving conductance of the remnant materials and/or the plasma that issymmetric with respect to the center axis 1002.

In various embodiments, the baffle 18A opens or closes an opening 27A tocontrol an amount of flow of plasma and/or the remnant materials fromthe plasma chamber 11 to the vacuum pump 20A. For example, an amount offlow from the plasma chamber 11 to outside the plasma chamber 11increases when the baffle 18A is open and decreases when the baffle 18Ais closed. Similarly, the baffle 18B opens or closes an opening 27B tocontrol an amount of flow of plasma and/or the remnant materials fromwithin the plasma chamber 11 to outside the plasma chamber 11. Theopenings 27A and 27B are formed in the transition flange 16 and arebetween the plasma chamber 11 and the vacuum pumps 20A and 20B. In someembodiments, the baffles 18A and 18B are located symmetric with respectto the center axis 1002. For example, the baffles 18A and 18B arelocated equidistant from the center axis 1002. The baffles 18A and 18Bare controlled to achieve symmetric conductance.

In some embodiments, the openings 27A and 27B are symmetrical withrespect to the center axis 1002 (FIG. 1A). For example, both theopenings 27A and 27B are located equidistant from the center axis 1002.In various embodiments, in which more than two openings are used toaccommodate flow to multiple pumps, all the openings are symmetricalwith respect to the center axis 1002. For example, all the openings arelocated equidistant from the center axis 1002. The opening 27A is formedbetween the vacuum pump 20A (FIG. 1A) and the enclosure 25 (FIG. 1A) ofthe plasma chamber 11 and the opening 27B is formed between the vacuumpump 20B (FIG. 1A) and the enclosure 25 of the plasma chamber 11.

The RF return path is formed by an RF return signal from the plasmaformed within the plasma chamber 11. The RF return signal returned fromthe plasma traverses via the dielectric 24, the bowl-shaped structure29A, the chuck support column 29B, and the RF sheath 31 of the RFtransmission line to the impedance matching network 43.

In some embodiments, any other number, e.g., three, four, etc., ofvacuum pumps are used instead of the vacuum pumps 20A and 20B, and allthe vacuum pumps are placed symmetric with respect to the center axis1002. For example, when three pumps are used, the pumps are located at acorresponding vertex of an imaginary horizontal triangle that isperpendicular to the center axis 1002 and the center axis 1002 passesthrough a center of the horizontal triangle. The symmetric arrangementof the vacuum pumps allow for symmetric conductance of the remnantmaterials and/or plasma from within the plasma chamber 11 to the vacuumpumps.

In some embodiments, instead of the bowl-shaped structure 29A, astructure of any other shape, e.g., polygonal, square, etc., is used.

In various embodiments, the enclosure 25 is surrounded by the side wall14, the upper electrode assembly 12, and the transition flange 16. Forexample, the enclosure 25 has a volume that is enclosed by the side wall14, the upper electrode assembly 12, and the transition flange 16.

In various embodiments, a portion of the chuck support column 29B is notangled with respect to another portion of the chuck support column 29B.For example, the chuck support column 29B is not bent but is straight.

In several embodiments, the RF rod 30 is not angled with respect toanother portion of the RF rod 30. For example, the RF rod 30 is not bentbut is straight.

In various embodiments, the transition flange 16 is a part of the plasmachamber 11. For example, the transition flange 16 forms a bottom wall ofthe plasma chamber 11.

In various embodiments, the center axis 1002 is equidistant from sidewall 14 of the plasma chamber 11. In some embodiments, the center axis1002 is equidistant from the RF rod 30 or from the chuck support column29B. In several embodiments, the center axis 1002 is equidistant from anedge of the lower electrode 22 (FIG. 1A).

In some embodiments, conductance within the plasma chamber 11 changes tochange pressure within the plasma chamber 11. For example, pressurewithin a region of the plasma chamber 11 increases when conductancewithin the region increases. As another example, pressure within aregion of the plasma chamber 11 decreases when conductance within theregion decreases. As yet another example, pressure within a region ofthe plasma chamber 11 is uniform when conductance within the region isuniform. As another example, pressure within a region of the plasmachamber 11 is non-uniform when conductance within the region isnon-uniform.

FIG. 1B is a diagram to illustrate a grid 50 optionally placed betweenthe electrode 22 and the bowl-shaped structure 29A and fitted betweenthe side wall 14 and the dielectric 24. For example, the grid 50 isfitted to the side wall 14 using the coupling mechanism and is connectedto the dielectric 24 using the coupling mechanism. The grid 50 is madeof silicon, or a conductive material, etc. The grid 50 is used tocontrol, e.g., increase, decrease, etc., conductance of the plasmaand/or the remnant materials from a region 1 to a region 2 within theplasma chamber 11. The regions 1 and 2 are further described below. Insome embodiments, the grid 50 is circular and has various openings O1thru On, where n is an integer greater than zero. As an example, eachopening is elongated or circular or of any other shape. Various shapesof openings of the grid 50 are illustrated in FIG. 1B. Although variousshapes are illustrated, the grid 50 has openings of the same shape. Insome embodiments, the grid 50 has two different shapes of openings.

The grid 50 is also used to channel the RF return signal from the plasmato the chuck support column 29B. For example, the grid 50 transfers theRF return signal from the plasma to the chuck support column 29B to formthe RF return path.

FIG. 1C is a diagram of an embodiment of the plasma chamber 11 toillustrate different conductance regions 1, 2, and 3 within the plasmachamber 11 and various parameters that affect conductance of the plasmaand/or the remnant materials. The plasma chamber 11 is used to processwafers of different sizes, e.g., 450 millimeter (mm) diameter wafer,wafer having a diameter greater than 450 mm, wafer having a diameterbetween 300 mm and 450 mm, wafer having a diameter between 300 mm and500 mm, wafer having a diameter between 300 and 600 mm, etc. A waferplaced within the plasma chamber 11 is designated as W. The plasmachamber 11 has the region 1 in which conductance is measured at a waferlevel, e.g., level at which a wafer is placed on the lower electrode 22,a level above a top surface 106 of the lower electrode 22, etc. Theregion 1 extends between the top surface 106 and the upper electrodeassembly 12. Conductance of the plasma and/or the remnant materials isuniform within the region 1. Moreover, the plasma chamber 11 has theregion 2 that is surrounded by a side wall 102 of the lower electrode22, an inner surface 104 of the side wall 14 of the plasma chamber 11, aplane passing via the top surface 106 of the lower electrode 22, and apre-determined plane, which is at a pre-determined distance from aninner bottom surface 108 of the transition flange 16. The transitionflange 16 provides an interface to one or more pumps P1 thru P6, e.g.,turbo molecular pumps (TMPs), turbo pumps, vacuum pumps, etc.Conductance drops within the region 2 compared to the region 1. Theplasma chamber 11 has the region 3 at the inner bottom surface 108 ofthe transition flange 16, e.g., within the pre-determined distance abovethe inner bottom surface 108 of the transition flange 16, etc.Conductance of the plasma and/or the remnant materials is uniform withinthe region 3.

A conductance path 130 of conductance of the plasma and/or the remnantmaterials has a direction of conductance from the region 1 via theregion 2 to the region 3. The conductance path 130 provides a directionof flow of the plasma and/or the remnant materials from the plasmachamber 11 to the pumps P1 thru P6 after a plasma process when the pumpsP1 thru P6 are operated to create a partial vacuum within the plasmachamber 11.

In some embodiments, a volume of the region 1 is determined by designsof liners attached to the inner surface 104, a volume of the region 2 isdetermined by a diameter 110 of the inner surface 104 of the side wall14 and a height of the lower electrode 22 and a diameter dLowerelectrodeof the lower electrode 22, and a volume of the region 3 is determined byone or more types and a number of the one or more pumps and a layout,e.g., arrangement, etc., of the one or more pumps with respect to thecenter axis 1002. The liners are attached to, e.g., fitted to, boltedto, etc., the side wall 14 of the plasma chamber 11. In someembodiments, a liner is made of a metal or a semiconductor material. Invarious embodiments, a liner is provided inside the plasma chamber 11 toprotect the chamber walls from etch or process particles, and the linearis cleaned and replaced when needed.

Examples of the diameter 110 include a diameter ranging between 32inches and 40 inches. As an illustration, the diameter 110 is 35 inches.As another illustration, the diameter 110 is 36 inches. The diameter 110of the region 1 is greater than that of a plasma chamber used to process300 mm wafers. It should be noted that in some embodiments in which theliners are fitted to the inner surface 104, the diameter 110 is adiameter from a surface of one of the liners attached to the innersurface 104 to a surface of another one of the liners attached to theinner surface 104 on an opposite side of the side wall 14. For example,a diameter of the region 1 is a length of a line that is perpendicularto the liners attached to the inner surface 104 of the plasma chamber11. In various embodiments in which the liners are not used, thediameter 110 is a diameter of the inner surface 104 of the side wall 14.

In some embodiments, the region 2 is a space that extends from theplasma passing via the top surface 106 to a bottom surface 120 of thelower electrode 22 and extends between the lower electrode 22 and theside wall 14. In various embodiments, the region 3 is located betweenthe bottom surface 120 and the inner bottom surface 108 of thetransition flange 16.

In various embodiments, in the region 1, there is conductance above atop surface of the wafer W and in the region 3, there is conductanceabove the pumps P1 through P6.

In some embodiments, a shield or a grid, such as the grid 50, etc., isfitted within the plasma chamber 11 to separate the region 2 from theregion 3. For example, the shield or grid is fitted to the inner surface104 of the side wall 14 under the lower electrode 22.

FIG. 2A is a block diagram of the plasma chamber 11 to illustrate howthe diameter 110, which is an inner diameter, of the plasma chamber 11,the diameter dLowereelectrode, which is an outer diameter, of the lowerelectrode 22, and a height 204 of the plasma chamber 11 are changed toincrease conductance within the plasma chamber 11. In some embodiments,the height 204 excludes a height of the upper electrode assembly 12(FIG. 1A) and includes a height of the side wall 14 and a height of thetransition flange 16. The diameter 110 of the plasma chamber 11, thediameter dLowereelectrode, and the height 204 of the plasma chamber 11are examples of parameters that affect conductance within the plasmachamber 11. Conductance is increased by maximizing the diameterdLowereelectrode of the lower electrode 22, minimizing the diameter 110of the plasma chamber 11, and minimizing the height of the plasmachamber 11.

In some embodiments, the plasma chamber 11 achieves conductance of atleast 2.25 times than that achieved using a plasma chamber forprocessing the 300 mm wafer. For example, the diameter 110 of the plasmachamber 11 ranges between 0.75 meters to 1 meter and the height of theside wall 14 of the plasma chamber 11 ranges between 0.4 meters and 0.7meters. Moreover, in the example, the height of the transition flange 16ranges between 0.2 meters to 0.4 meters. Further, in this example, adistance 202 between the wafer W and an edge of the lower electrode 22ranges between 14 inches and 30 inches.

FIG. 2B is a top view of an embodiment of the plasma chamber 11. A rate,e.g., speed, etc., of conductance of the remnant materials and/or theplasma increases from the region 1 to the region 3 (FIG. 1C) when achannel formed between the side wall 14 and the lower electrode 22 isnarrow. The channel becomes narrower as a width, e.g., the diameterdLowereelectrode, etc., of the lower electrode 22 is increased and awidth, e.g., the diameter 110, etc., of the plasma chamber 11 decreases.The width of the lower electrode 22 is increased to facilitate placementof the 450 mm wafer compared to the 300 mm wafer on the lower electrode22. Also, as the height 204 (FIG. 2A) becomes shorter, a distance to betraversed by the remnant materials and/or the plasma is reduced toincrease the rate of conductance.

FIG. 3A is a diagram to illustrate a manner in which the chuck supportcolumn 29B is inserted in the plasma chamber 11. The chuck supportcolumn 29B is inserted into the enclosure 25 (FIG. 1A) of the plasmachamber 11 via an opening 302 formed within the transition flange 16. Insome embodiments, the opening 302 for mounting the chuck support column29B is located at a center of the inner bottom surface 108 (FIG. 1C) ofthe transition flange 16 (FIG. 1C). For example, the opening 302 is notformed within the side wall 14 of the plasma chamber 11. As anotherexample, no portion of the opening 302 is created within the side wall14.

In various embodiments, an angle is not formed inside the plasma chamber11 between a portion of the chuck support column 29B that couples to thebowl-shaped structure 29A (FIG. 1A) and another portion of the chucksupport column 29B within the plasma chamber 11. Moreover, uniformity inconductance at the inner bottom surface 108 of the transition flange 16,which provides an interface to the one or more pumps, is achieved whenthe chuck support column 29B within the plasma chamber 11 is vertical tonot interfere with removal of the plasma and/or the remnant materials.

FIG. 3B is an embodiment of a pressure map 304 to illustrate uniformityin pressure at the top surface of the wafer W. By mounting the chucksupport column 29B from a bottom of the plasma chamber 11 via thetransition flange 16, uniformity in pressure at the wafer W is achievedand uniformity in pressure at a pre-determined distance, e.g., 1centimeter, etc., above the wafer W is achieved.

FIG. 3C is an embodiment of a pressure map 306 to illustrate uniformityin pressure at the pre-determined distance above the wafer W. Asillustrated in the pressure map 306, minimum and maximum pressurevariation at the pre-determined distance above the wafer W is 0.29%.

FIG. 4 is a graph 400 to illustrate that the one or more pumps are usedto remove the plasma and/or the remnants of a plasma process from theplasma chamber 11. The graph 400 plots pump speed in liters/second (L/s)versus chamber speed in liters/second. The chamber speed is conductanceat the wafer W. As shown in the graph 400, either a single pump that isa 6 kiloliter/second (kL/s) speed pump is used or two pumps that areeach a 4.5 kL/s speed pump or two pumps that are each a 3 kL/s speedpump or three pumps that are each a 2 kL/s speed pump, are used toremove the plasma and/or the remnants Instead of one large 6 kL/s pump,multiple small pumps are used as is illustrated using FIG. 4. By usingthe one or more pumps as illustrated in FIG. 4, a goal of achievingconductance that is at least 2.25 times greater is achieved.

A speed by which the reactant gases are provided to the plasma chamber11 to generate plasma or maintain plasma within the plasma chamber 11increases at least by 2.25 times when the plasma chamber 11 is used toprocess the 450 mm wafer. The speed increases compared to a speed withwhich the reactant gases are provided to a plasma chamber for processingthe 300 mm wafer. Also, to match the increase in speed, a speed ofpumping the remnant materials and/or the plasma from the plasma chamber11 to outside the plasma chamber 11 is increased by at least 2.25 timescompared to pumps used to remove the remnant materials and/or the plasmafrom a plasma chamber used to process the 300 mm wafer.

FIG. 5A is a top view 500 of an embodiment of the plasma system 10 toillustrate use of the chuck support column 29B without a baffle. In thetop view 500 of the plasma system 10, the chuck support column 29B, theopenings 27A and 27B, the lower electrode 22, and the side wall 14 ofthe plasma chamber 11 are shown. A baffle, e.g., a plate, a metal plate,etc. is not used in an embodiment of the plasma chamber 11 illustratedusing the top view 500.

FIG. 5B is an embodiment of a pressure plot 524A at the top surface ofthe wafer W when a baffle is not used in the plasma system 10 (FIG. 1A).Moreover, FIG. 5C is an embodiment of another pressure plot 524B at thepre-determined distance from the top surface of the wafer W when abaffle is not used in the plasma system 10 (FIG. 1A). The pressure plots524A and 524B are further explained below.

FIG. 5D is another top view 510 of an embodiment of the plasma system 10in which the baffles 18A and 18B are used. For example, the baffles 18Aand 18B are placed within the region 3, e.g., adjacent to the innerbottom surface 108 (FIG. 1C) of the transition flange 16 (FIG. 1C). Thebaffle 18A is moved in the vertical direction to cover or open theopening 27A and the baffle 18B is moved in the vertical direction tocover or open the opening 27B. The baffles 18A and 18B are operated,e.g., moved up or down, etc., to control opening and closing of theopenings 27A and 27B to further control pressure within the plasmachamber 11. For example, each baffle, as described herein, is controlledvia a motor drive assembly and a connection mechanism to control avertical movement of the baffle. Further description of how a baffle iscontrolled is provided below. A baffle is moved up or down to controlopening and closing of the openings 27A and 27B to further controlconductance within the plasma chamber 11 and to achieve symmetry ofconductance within the region 3 of the plasma chamber 11. For example,conductance is increased when the baffles 18A and 18B are moved up inthe vertical direction to open the openings 27A and 27B and decreasedwhen the baffles 18A and 18B are moved down in the vertical direction toclose the openings 27A and 27B. In some embodiments, a baffle acts as avalve to prevent air and/or other materials from flowing into the plasmachamber 11 from outside the plasma chamber 11.

The baffles 18A and 18B are polygonal, e.g., rectangular, square, etc.,in shape and are located above the respective pumps 20A and 20B. In someembodiments, the baffles 18A and 18B are of another shape, e.g.,circular, oval, etc.

FIG. 5E is an embodiment of a pressure plot 526A at the top surface ofthe wafer W when the baffles 18A and 18B are used in the plasma system10 (FIG. 1A). Moreover, FIG. 5F is an embodiment of another pressureplot 526B at the pre-determined distance from the top surface of thewafer W when the baffles 18A and 18B are used in the plasma system 10(FIG. 1A). The pressure plots 526A and 526B are further explained below.

FIG. 5G is yet another top view 520 of the plasma system 10 in which abaffle 522A and a baffle 522B are used. Each baffle 522A and 522B iscrescent-shaped and is located at an outer edge of the inner bottomsurface 108 of the transition flange 16. For example, the baffles 522Aand 522B are located adjacent to the inner bottom surface 108 of thetransition flange 16 and adjacent to the inner surface 104 (FIG. 1C) ofthe side wall 14 to control a portion of the openings 27A and 27Bbetween the transition flange 16 and the pumps 27A and 27B. The baffles522A and 522B are controlled via a motor drive assembly, examples ofwhich are provided herein, and a connection mechanism, examples of whichare provided herein, to control conductance within the plasma chamber11. The use of baffles 18A, 18B (FIG. 5D), 522A, and 522B facilitatesachievement of an increased degree of flow symmetry at high conductanceto achieve pressure control within the plasma chamber 11.

In various embodiments, all the baffles 18A, 18B, 522A, and 522B areused within the plasma chamber 11. For example, all the baffles 18A,18B, 522A, and 522B are placed adjacent to the inner bottom surface 108of the transition flange 16.

FIG. 5H is an embodiment of a pressure plot 528A at the top surface ofthe wafer W when the baffles 522A and 522B are used in the plasma system10 (FIG. 1A). Moreover, FIG. 51 is an embodiment of another pressureplot 528B at the pre-determined distance from the top surface of thewafer W when the baffles 522A and 522B are used in the plasma system 10(FIG. 1A).

As seen from the pressure maps 524A, 524B, 526A, and 526B, pressure atthe wafer W, e.g., on the top surface of the wafer W, etc., is moreuniform, e.g., symmetric, etc., with use of the baffles 18A and 18B thanwhen the baffles 18A and 18B are not used. Moreover, as seen from thepressure maps 526A, 526B, 528A, and 528B, pressure at the pre-determineddistance above the wafer W is more uniform with use of the baffles 522Aand 522B compared to when the baffles 522A and 522B are not used andcompared to when the baffles 18A and 18B are used within the plasmachamber 11.

An increase in uniformity of pressure at the wafer W or at thepre-determined distance above the wafer W provides uniformity inprocessing of the wafer W. For example, the wafer W is etched moreuniformly when the baffles 18A and 18B are used compared to when thebaffles 18A and 18B are not used. As another example, the wafer W isetched more uniformly when the baffles 522A and 522B are used comparedto when the baffles 522A and 522B are not used.

FIG. 5J is an isometric view of a baffle 550 to illustrate control ofthe baffle 550 using a processor 560. The baffle 550 is an example ofthe baffle 18A or the baffle 18B (FIG. 1A). Similarly, an opening 552within the inner bottom surface 108 of the transition flange 16 is anexample of the opening 27A or the opening 27B (FIG. 5A). The processor560 is the processor of the host computer system. The processor 560 isconnected to a motor drive assembly 562, which is connected via aconnection mechanism 564 to the baffle 550. The motor drive assembly 562has the same structure as that of the motor drive assembly 45 (FIG. 1A).For example, the motor drive assembly 562 includes a driver that isconnected to a motor, which is further connected to the connectionmechanism 564. As another example, the driver of the motor driveassembly 562 includes one or more transistors and the drive is connectorto a stator of the motor of the motor drive assembly 562 and the rotorof the motor is connected to the connection mechanism 564. Examples ofthe connection mechanism 564 include one or more rods, or one or morerods that are connected to each other via a gear mechanism, or a poppetvalve, etc.

The baffle 550 reduces an amount of space taken up under the transitionflange 16 by a pendulum valve, which is further described below. Forexample, the baffle 550 reduces a distance, e.g., a height, etc., ofconductance from the top surface of the wafer W to the vacuum pumps 20Aand 20B (FIG. 1A) by being located inside the plasma chamber 11 comparedto the pendulum valve, which is located outside and below the plasmachamber 11. The reduction in the amount of space increases conductance.

Moreover, the baffle 550 is controlled to move in the vertical directionto control conductance within the plasma chamber 11. For example, theprocessor 560 sends a signal to the driver of the motor drive assembly562 and upon receiving the signal, the driver generates a currentsignal. The current signal is provided to the motor of the motor driveassembly 562 to rotate by a pre-determined amount. The rotation of themotor rotates the connection mechanism 564 to move the baffle 550 in thevertical direction, either away from the opening 552 to open the opening552 or towards the opening 552 to close the opening 552.

FIG. 6 is an embodiment of a graph 600 to illustrate an amount ofcontrol of conductance of a gas, e.g., Argon, etc., from the plasmachamber 11 (FIG. 1A) to outside the plasma chamber 11 with and withoutuse of poppet valves. The graph 600 plots pressure at the top surface ofthe wafer W versus a flow of the gas via the openings 27A and 27B (FIG.5A) in the transition flange 16. A plot C1 is plotted when poppet valvesare not used to control the baffles 18A and 18B (FIG. 5D) and not usedto control the baffles 522A and 522B (FIG. 5G). Moreover, a plot C2 isplotted when the poppet valves are used. A plot C3 is a target plot toillustrate that a conductance of 2.25 times is achieved using the plasmachamber 11. The conductance is 2.25 times compared to that achievedusing a plasma chamber for the 300 mm wafer.

As illustrated from the plots C1 and C2, to achieve the same amount ofpressure at the plane of the wafer W as that shown in the target plotC3, there is more room to change the conductance of the remnantmaterials and/or the plasma.

FIG. 7A is an isometric view of an embodiment of a plasma system 700 toillustrate that the chuck support column 29B is inserted via the opening302 (FIG. 3) formed within the inner bottom surface 108 of thetransition flange 16 to be within the enclosure 25 (FIG. 1A) surroundedby the side wall 14 (FIG. 1A). This is how the chuck support column 29Bis vertically mounted within a plasma chamber 11. The bowl-shapedstructure 29A is fitted to the chuck support column 29B from a top ofthe plasma system 700.

FIG. 7B is a side view of an embodiment of a plasma system 702 toillustrate fitting of the side wall 14 around the chuck support column29B and fitting of the bowl-shaped structure 29A. The chuck supportcolumn 29B is inserted via the opening 302 (FIG. 3) and the bowl-shapedstructure 29A is placed on top of the chuck support column 29B to befitted to the chuck support column 29B. The side wall 14 is then placedaround the bowl-shaped structure 29A and is fitted to the transitionflange 16.

In some embodiments, the lower electrode 22 and the chuck support column29B are concentric with respect to each other, with respect to thetransition flange 16, and with respect to the side wall 14. Theconcentric arrangement of the lower electrode 22, the chuck supportcolumn 29B, the transition flange 16, and the side wall 14 improves RFpath symmetry and increases conductance within the plasma chamber 11.

FIG. 7C is a side view of an embodiment of a plasma system 704 toillustrate fitting of the upper electrode system 12 to the side wall 14.Once the side wall 14 is fitted to the transition flange 16, the upperelectrode assembly 12 that includes multiple upper electrode components,e.g., a gas feed, the upper electrode, an upper electrode extension,multiple dielectric rings, multiple electrode coils, a Faraday shield,etc., is fitted, e.g., bolted to, attached to, etc., to the top surface19 of the side wall 14 to form the plasma chamber 11.

It should be noted that the upper electrode assembly 12 defines theplasma chamber 11 to be a capacitively coupled plasma (CCP) chamber or atransformer coupled plasma (TCP) chamber. For example, the same sidewall 14 is fitted with an upper capacitive electrode or an upperinductive electrode. As another example, the same side wall 14 is fittedto the upper electrode assembly 12 to perform a conductor etch or adielectric etch.

Between the pump 20A and the transition flange 16, a pendulum valve 722Ais located. Moreover, between the pump 20B and the transition flange 16,a pendulum valve 722B is located. In some embodiments, each pendulumvalve 722A and 722B prevents the plasma and/or the remnant materials ofa plasma process from flowing back into the enclosure 25 of the plasmachamber 11. For example, each pendulum valve 722A and 722B is closedwhen corresponding one of the pumps 20A or 20B is not operating and isopen when the corresponding pump 20A or 20B is operating.

In some embodiments, the pendulum valves 722A and 722B are locatedsymmetric with respect to the center axis 1002. For example, thependulum valve 722A is located at the same distance from the center axis1002 as that of the pendulum valve 722B.

It should be noted that in some embodiments, an amount of power of themodified RF signal provided to the lower electrode 22 for processing,e.g., etching materials deposited on, depositing materials on, cleaning,etc., the wafer W of a diameter greater than 300 mm, e g , a waferbetween 300 mm and 450 mm, the 450 mm wafer, etc., is greater than thatprovided for processing a 300 mm wafer. The power is generated by one ormore RF generators 51 (FIG. 1A).

Moreover, in various embodiments, a volume of the enclosure 25 (FIG. 1A)of the plasma chamber 11 for processing the wafer W of a diametergreater than 300 mm is greater, e.g., by three times, by 2.5 times, by3.3 times, by 4 times, etc., than that provided for processing a 300 mmwafer. Moreover, in some embodiments, a flow rate associated withprocessing the wafer W of a diameter greater than 300 mm is greater,e.g., by a multiple in a range between two times and three times, etc.,than a flow rate for processing a 300 mm wafer. For example, the one ormore pumps having a combined capacity, measured in kiloliters/second,are used during processing the wafer W. The combined capacity is amultiple, e.g., two times, three times, a multiple in a range betweentwo times and three times, etc., greater than a combined capacity of oneor more pumps used for controlling conductance in a plasma chamber inwhich the 300 mm wafer is processed.

FIG. 8A is an isometric view of an embodiment of the side wall 14. Thediameter 110 of the plasma chamber 11 is an inner diameter of the innersurface 104 of the side wall 14. The side wall 14 has the inner surface104 and the outer surface 21.

In some embodiments, instead of a circular cross-section, the innersurface 104 of the side wall 14 has another cross-sectional shape, e.g.,oval, polygonal, etc.

FIG. 8B is an isometric view of an embodiment of the transition flange16. The transition flange 16 has the inner bottom surface 108, which isat a lower level compared to a top surface 810 of the transition flange16. The top surface 810 is fitted with the bottom surface 17 (FIG. 1A)of the side wall 14. The openings 302, 27A, and 27B are formed withinthe inner bottom surface 108. Moreover, in various embodiments, theopening 302 is concentric with the center axis 1002. For example, thecenter axis 1002 passes through a center of the opening 302. As anotherexample, the opening 302 is coaxial with the center axis 1002.

FIG. 9 is an isometric view of the side wall 14 and the transitionflange 16. A spool flange 902 is included between the pendulum valve722B and the transition flange 16. Similarly, in some embodiments, aspool flange is located between the pendulum valve 722A and thetransition flange 16. A spool flange is used to attach a pendulum valveto the transition flange 16. In various embodiments, the spool flange isnot used to attach a pendulum valve to the transition flange 16.

The outer surface 21 of the side wall 14 has a square cross-section theinner surface 104 of the side wall 14 has a circular cross-section. Insome embodiments, both the inner surface 104 and the outer surface 21have the same cross-sectional shape, e.g., square or circular orpolygonal, etc.

FIG. 10A is a diagram used to illustrate an embodiment of the chucksupport column 29B that is vertically mounted into the plasma chamber 11from a bottom portion of the plasma chamber 11 versus the cantileveredstem support that is mounted via the side wall 14. As shown, the chucksupport column 29B is straight and is not bent. Also, with use of thechuck support column 29B, a symmetric conductance of plasma is achievedwithin the plasma chamber 11. Moreover, etch rate uniformity increaseswhen the chuck support column 29B is used compared to the cantileveredstem support. The chuck support column 29B includes the RF rod 30 (FIG.1A), within the hollow space 33 (FIG. 1A) of the chuck support column29B. Moreover, in some embodiments, the RF rod 30 is coaxial withrespect to the chuck support column 29B and the center axis 1002. Invarious embodiments, the RF rod 30 is not bent to form an angle betweenportions of the RF rod 30. Moreover, the RF rod 30 is not inserted intothe plasma chamber 11 via the side wall 14 of the plasma chamber 11. Thechuck support column 29B provides an RF return path symmetry withrespect to the center axis 1002 of the plasma chamber 11 to reduce,e.g., eliminate, etc., skews from non-uniform return paths.

FIG. 10B is a graph 1003 to illustrate that with the use of the chucksupport column 29B that is vertically symmetric with respect to thecenter axis 1002, an etch rate is more uniform compared to thecantilevered stem support. The graph 1003 plots an etch rate versus aposition of the lower electrode 22. As shown by a dashed plot 1004,which corresponds to the chuck support column 29B, an etch rate issymmetrical with respect to the lower electrode 22 compared an etch rateachieved with use of the cantilevered stem support. The etch rateachieved with the use of the cantilevered stem support is illustratedusing a solid plot 1006.

FIG. 11 is a diagram of an embodiment of a plasma system 1102 toillustrate a symmetric RF supply path 1106A and a symmetric RF returnpath 1106B. The plasma system 1102 includes the plasma chamber 11, thechuck support column 29B, the one or more RF generators 51, and a hostcomputer system 1108. Examples of the host computer system 1108 includea desktop computer, a laptop computer, a smart phone, etc.

The one or more RF generators 51 are controlled by the host computersystem 1108. For example, the one or more RF generators 51 receivefrequency levels and power levels from the processor 560 of the hostcomputer system 1108. The one or more RF generators 51 generatecorresponding one or more RF signals having corresponding one or morefrequencies and corresponding one or more power amounts, and provide theone or more RF signals to the impedance matching network 43. Theimpedance matching network 43 matches an impedance of a load, e.g., theRF transmission line, the plasma chamber 11, etc., with that of asource, e.g., the one or more RF generators 51, the corresponding one ormore RF cables coupling the one or more RF generators 51 to theimpedance matching network 43, etc., to generate the modified RF signalfrom the corresponding one or more RF signals received by the impedancematching network 43.

The modified RF signal is provided from the impedance matching network43 to the lower electrode 22 to strike and/or maintain plasma within theplasma chamber 11. The plasma is struck and/or maintained when processgases are supplied to the plasma chamber 11. Examples of a process gasesinclude an oxygen-containing gas, such as O₂. Other examples of aprocess gas include a fluorine-containing gas, e.g., tetrafluoromethane(CF₄), sulfur hexafluoride (SF₆), hexafluoroethane (C₂F₆), etc.

The modified RF signal is supplied via the RF supply path 1106A thatincludes the RF rod 28, the RF rod 30, and the lower electrode 22. Also,a return RF signal, which is generated from the plasma within the plasmachamber 11, passes via the return RF path 1106B that includes thebowl-shaped structure 29A that supports the lower electrode 22, thechuck support column 29B that supports the bowl-shaped structure 29A,and the RF sheath 31 to reach the impedance matching network 43. The RFpaths 1106A and 1106B are symmetric with respect to the center axis 1002to improve conductance and uniformity of the conductance within theplasma chamber 1102.

Fluid lines 1120A and 1120B pass through a hollow space 1105 within theRF rod 30 for supplying a heating fluid to heat the lower electrode 22or for supplying a cooling fluid to cool the lower electrode 22. Thehollow space 1105 is surrounded by the RF rod 30. Moreover, a gas line1122 is located within the hollow space 1105 of the RF rod 30 forsupplying one or more gases, e.g., a cooling gas, helium gas, etc., toone or more gas inlets, e.g., slots for gas to enter into the lowerelectrode 22, etc., formed within the lower electrode 22 to cool thelower electrode 22. In various embodiments, a purge gas line is locatedwithin the hollow space 1105 of the RF rod 30 for purging one or moregases from the plasma chamber 11.

In some embodiments, instead of to a side of the chuck support column29B, as shown, the impedance matching network 43 is located at a bottompart of the chuck support column 29B to provide further symmetry to theRF paths 1106A and 1106B to increase uniformity in conductance withinthe plasma chamber 11. For example, the impedance matching network 43 islocated vertically, e.g., directly, etc., below the RF rod 30. Asanother example, the impedance matching network 43 is located below theRF rod 30 and a housing of the impedance matching network 43 isconcentric with respect to the center axis 1002. As yet another example,the impedance matching network 43 is connected vertically below the RFrod 30 to a bottom end of the RF rod 30. To illustrate, the impedancematching network 43 is located within the hollow space 33 of the chucksupport column 29B and is connected to the RF rod 30. A top end of theRF rod 30 is connected to the lower electrode 22 and is located oppositeto the bottom end of the RF rod 30.

In various embodiments, in addition to the gas line 1122 and the fluidlines 1120A and 1120B, supply and/or receive lines are located withinthe hollow space 1105 of the RF rod 30. For example, one or morepneumatic supply lines, e.g., lift rods, etc., for controllingcorresponding one or more lift pins to lift the wafer W from the topsurface 106 of the lower electrode 22 are provided within the hollowspace 1105 of the RF rod 30. As another example, one or more directcurrent (DC) lines, e.g., conductors, etc., for sensing a temperature ofthe lower electrode 22 measured by a thermocouple are provided withinthe hollow space 1105 of the RF rod 30. The thermocouple is placedproximate to the lower electrode 22, e.g., is within a pre-determineddistance from the lower electrode 22, touches the lower electrode 22,etc. As yet another example, one or more AC lines, e.g., conductors,etc., for providing AC power to heaters, e.g., resistors, etc., withinthe lower electrode 22 are located within the hollow space 1105 of theRF rod 30. The location of the supply and receive lines, the gas line1122, the purge gas line, and the fluid lines 1120A and 1120B within thehollow space 1105 of the RF rod facilitates achievement of symmetry ofconductance and pressure within the plasma chamber 11.

In some embodiments, the fluid lines 1120A and 1120B are equidistantfrom the center axis 1002. In various embodiments, the gas line 1122 isconcentric with respect to the center axis 1002. In several embodiments,all the supply and receive lines are located symmetric with respect tothe center axis 1002. For example, the pneumatic lines for lifting orlowering the wafer W are located equidistant from the center axis 1002.As another example, the DC lines are located equidistant from the centeraxis 1002. As yet another example, the AC lines are located equidistantfrom the center axis 1002.

FIG. 12 is a diagram of an embodiment of the plasma system 1102 toillustrate a transport position of the lower electrode 22 during loadingof the wafer W onto the lower electrode 22. The wafer W is loaded ontothe lower electrode 22 via a slot 1702 within the side wall 14 of theplasma chamber 11. The position of the lower electrode 22 is lower thanthe position of the lower electrode 22 illustrated below in FIG. 13. Forexample, a gap 1204 between the lower electrode 22 and the upperelectrode assembly 12 is greater during a transport position in whichthe wafer W is being loaded into the plasma chamber 11 compared to thatwhen the wafer W is being processed within the plasma chamber 11.

A stationary support 1202, e.g., a bracket made from a metal, etc.,supports the plasma chamber 11. For example, the stationary support 1202is fitted to the transition flange 16 so that the stationary support1202 abuts the transition flange 16 to support the plasma chamber 11.The linear rail 47 is attached, e.g., fitted to, bolted to, etc., to anedge E1 of the stationary support 1202. For example, the linear rail 47is attached to the edge E1 of the stationary support 1202 that is angledwith respect to an edge E2 of the stationary support 1202 to which thetransition flange 16 is attached.

The processor 560 sends a control signal to the driver of the motordrive assembly 45. Upon receiving the control signal, the drivergenerates a current signal, which is provided to a stator of the motor.The stator generates an electric field, which rotates a rotor of themotor to rotate and/or move the connection mechanism 53. The rotationand/or movement of the connection mechanism 53 moves the linear rail 47in the vertical direction to slide or roll against the stationarysupport 1202 in the vertical direction. For example, the linear rail 47slides or rolls with respect to the edge E1. The sliding or rolling ofthe linear rail 47 moves the chuck support column 29B, which isattached, e.g., fitted to, bolted to, etc., to the linear rail 47, inthe vertical direction. Moreover, the sliding or rolling of the linearrail 47 moves components, e.g., the RF rod 30, the fluid supply lines1120A and 1120B, the purge gas line, the gas line 1122, the supplyand/or receive lines (FIG. 11), etc., in the vertical direction. Themovement of the chuck support column 29B moves the bowl-shaped structure29A, which is attached to the chuck support column 29A. The lowerelectrode 22, which is support on the bowl-shaped structure 29A, movesin the vertical direction with the movement of the bowl-shaped structure29A to change an amount of the gap 1204 between the lower electrode 22and the upper electrode assembly 12.

It should be noted that the sliding or rolling of the linear rail 47occurs when the stationary support 1202 is fixed with the transitionflange 16 and when the side wall 14 is at a fixed location. For example,the linear rail 47 moves in the vertical direction with respect to thestationary support 1202 and the side wall 14.

FIG. 13 is a diagram of an embodiment of a plasma system 1102 toillustrate a position of the lower electrode 22 during processing, e.g.,a process position, etc., of the wafer W. The position of the lowerelectrode 22 is higher than the position of the lower electrode 22illustrated in FIG. 12 when the wafer W is transported into the plasmachamber 11. For example, an amount of the gap 1204 between the lowerelectrode 22 and the upper electrode assembly 12 is lower in the processposition than an amount of the gap 1204 between the lower electrode 22and the upper electrode assembly 12 in the transport position. The gap1204 is confined by the upper electrode assembly 12, a C-shroud 1302,and the lower electrode 22 during processing of the wafer W. The lowerelectrode 22 is placed at the process position by the motor driveassembly 46 under control of the processor 560. The motor drive assembly46 moves the chuck support column 29B up or down, e.g., in the verticaldirection, etc., with respect to the stationary support 1202 to achievethe process position from the transport position.

It is noted that some or all of the above-described operations areperformed with reference to a parallel plate plasma chamber, e.g., acapacitively coupled plasma chamber, etc., or with reference to othertypes of plasma chambers, e.g., a plasma chamber including aninductively coupled plasma (ICP) reactor, a transformer coupled plasma(TCP) reactor, conductor tools, dielectric tools, a plasma chamberincluding an electron-cyclotron resonance (ECR) reactor, etc. Forexample, the 2 MHz RF generator, the 27 MHz RF generator, and/or the 60MHz RF generator are coupled to an inductor within the ICP plasmareactor.

It should be noted that in some of the above-described embodiments, anRF signal is provided to the lower electrode 22 and the upper electrodeis grounded. In various embodiments, an RF signal is provided to theupper electrode and the lower electrode 22 is grounded.

In some embodiments, the systems and methods, described herein, arepracticed with various computer system configurations includinghand-held hardware units, microprocessor systems, microprocessor-basedor programmable consumer electronics, minicomputers, mainframecomputers, and the like. In various embodiments, the systems andmethods, described herein, are practiced in distributed computingenvironments where tasks are performed by remote processing hardwareunits that are linked through a computer network.

In some embodiments, a controller is part of the systems and methods,described herein. In various embodiments, the systems and methods,described herein, further include semiconductor processing equipment,including a processing tool or tools, chamber or chambers, a platform orplatforms for processing, and/or specific processing components, thelower electrode 22, a gas flow system, etc. The controller includeselectronics for controlling operation before, during, and afterprocessing of the wafer W. The controller, depending on processingrequirements, is programmed to control any process disclosed herein,including a delivery of process gases, temperature settings (e.g.,heating and/or cooling), pressure settings, vacuum settings, powersettings, RF generator settings, RF matching circuit settings, frequencysettings, flow rate settings, fluid delivery settings, positional andoperation settings, wafer transfers into and out of the plasma chamber11 and other transfer tools.

Broadly speaking, in a variety of embodiments, the controller is definedas electronics having various integrated circuits, logic, memory, and/orsoftware that receive instructions, issue instructions, controloperation, enable cleaning operations, enable endpoint measurements, andthe like. The integrated circuits include chips in the form of firmwarethat store program instructions, digital signal processors (DSPs), chipsdefined as ASICs, PLDs, one or more microprocessors, or microcontrollersthat execute program instructions (e.g., software). The programinstructions are instructions communicated to the controller in the formof various individual settings (or program files), defining operationalparameters for carrying out a process on or for the wafer W. Theoperational parameters are, in some embodiments, a part of a recipedefined by process engineers to accomplish one or more processing stepsduring fabrication of one or more layers, materials, metals, oxides,silicon, silicon dioxide, surfaces, circuits, and/or dies of the waferW.

The controller, in some embodiments, is a part of or coupled to acomputer, e.g., the host computer system 1108 (FIG. 11) that isintegrated with, coupled to the plasma system 10 (FIG. 1A), or otherwisenetworked to the plasma system 10. For example, the controller is in a“cloud” or all or a part of a fab host computer system, which allows forremote access for processing of the wafer W. The controller enablesremote access to the plasma system 10 to monitor current progress offabrication operations, examines a history of past fabricationoperations, examines trends or performance metrics from a plurality offabrication operations, to change parameters of current processing, toset processing steps to follow a current processing, or to start a newprocess.

In some embodiments, a remote computer (e.g. a server) provides processrecipes to the plasma system 10 over a computer network, which includesa local network or the Internet. The remote computer includes a userinterface that enables entry or programming of parameters and/orsettings, which are then communicated to the plasma system 10 from theremote computer. In some examples, the controller receives instructionsin the form of settings for processing the wafer W. It should beunderstood that the settings are specific to a type of process to beperformed on the wafer W and parts of the plasma system 10 that thecontroller interfaces with or controls. Thus as described above, thecontroller is distributed, such as by including one or more discretecontrollers that are networked together and working towards a commonpurpose, such as the fulfilling processes described herein. An exampleof a distributed controller for such purposes includes one or moreintegrated circuits in the plasma system 10 in communication with one ormore integrated circuits located remotely (such as at a platform levelor as part of the remote computer) that combine to control a process inthe plasma chamber 11.

Without limitation, in various embodiments, the systems and methods,described herein, include a plasma etch chamber, a deposition chamber, aspin-rinse chamber, a metal plating chamber, a clean chamber, a beveledge etch chamber, a physical vapor deposition (PVD) chamber, a chemicalvapor deposition (CVD) chamber, an atomic layer deposition (ALD)chamber, an atomic layer etch (ALE) chamber, an ion implantationchamber, a track chamber, and any other semiconductor processing chamberthat is associated or used in fabrication and/or manufacturing ofsemiconductor wafers, e.g., the wafer W, etc.

It is further noted that although the above-described operations aredescribed with reference to a parallel plate plasma chamber, e.g., acapacitively coupled plasma chamber, etc., and an ICP reactor, in someembodiments, the above-described operations apply to other types ofplasma chambers, e.g., a transformer coupled plasma (TCP) reactor,conductor tools, dielectric tools, a plasma chamber including anelectron cyclotron resonance (ECR) reactor, etc.

As noted above, depending on a process operation to be performed by thetool, the controller communicates with one or more of tool circuits ormodules, tool components, cluster tools, tool interfaces, adjacenttools, neighboring tools, tools located throughout a factory, a maincomputer, another controller, or tools used in material transport thatbring containers of wafers to and from tool locations, and/or load portsin a semiconductor manufacturing factory.

With the above embodiments in mind, it should be understood that some ofthe embodiments employ various computer-implemented operations involvingdata stored in computer systems. These computer-implemented operationsare those that manipulate physical quantities.

Some of the embodiments, described above, relate to a hardware unit oran apparatus for performing these operations. The apparatus is speciallyconstructed for a special purpose computer. When defined as the specialpurpose computer, the special purpose computer performs otherprocessing, program execution or routines that are not part of thespecial purpose, while still being capable of operating for the specialpurpose.

In some embodiments, the operations, described herein, are performed bya computer selectively activated, or are configured by one or morecomputer programs stored in a computer memory, or are obtained over acomputer network. When data is obtained over the computer network, thedata may be processed by other computers on the computer network, e.g.,a cloud of computing resources, etc.

In several embodiments, the methods described herein, are fabricated asa computer-readable code on a non-transitory computer-readable medium.The non-transitory computer-readable medium is any data storage hardwareunit, e.g., a memory device, etc., that stores data, which is thereafterread by a computer system. Examples of the non-transitorycomputer-readable medium include hard drives, network attached storage(NAS), read-only memory (ROM), random access memory (RAM), compactdisc-ROMs (CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-RWs),magnetic tapes and other optical and non-optical data storage hardwareunits. In some embodiments, the non-transitory computer-readable mediumincludes a computer-readable tangible medium distributed over anetwork-coupled computer system so that the computer-readable code isstored and executed in a distributed fashion.

Although some method operations, described above, were presented in aspecific order, it should be understood that in various embodiments,other housekeeping operations are performed in between the methodoperations, or the method operations are adjusted so that they occur atslightly different times, or are distributed in a system which allowsthe occurrence of the method operations at various intervals, or areperformed in a different order than that described above.

It should further be noted that in various embodiments, one or morefeatures from any embodiment described above are combined with one ormore features of any other embodiment without departing from a scopedescribed in the various embodiments described in the presentdisclosure.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, it will be apparent thatcertain changes and modifications can be practiced within the scope ofappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the embodiments arenot to be limited to the details given herein, but may be modifiedwithin the scope and equivalents of the appended claims.

1. A plasma chamber comprising: a side wall; a chuck support columnhaving a hollow space; a lower electrode situated within an enclosuresurrounded by the side wall, wherein the lower electrode is supported bythe chuck support column; a transition flange attached to the side wall,wherein the transition flange includes a transition flange opening and aplurality of vacuum openings that surround the transition flangeopening, wherein the chuck support column passes via the transitionflange opening to reduce an impedance to the conductance of remnantmaterials from within the plasma chamber via the plurality of vacuumopenings to outside the plasma chamber; and a radio frequency (RF) rodextending via the transition flange opening and the hollow space of thechuck support column to be coupled the lower electrode to provide RFpower to the lower electrode, wherein the RF rod includes a bowl-shapedportion and a column-shaped portion.
 2. The plasma chamber of claim 1,further comprising an upper electrode assembly that is fitted to theside wall, wherein the side wall extends between the transition flangeand the upper electrode assembly, wherein the side wall surrounds thecolumn-shaped portion and the lower electrode.
 3. The plasma chamber ofclaim 2, wherein the upper electrode assembly is an inductively coupledplasma (ICP) assembly, wherein the ICP assembly is configured to bereplaced with a capacitively coupled plasma (CCP) assembly.
 4. Theplasma chamber of claim 2, wherein the upper electrode assembly is acapacitively coupled plasma (CCP) assembly, wherein the CCP assembly isconfigured to be replaced with an inductively coupled plasma (ICP)assembly.
 5. The plasma chamber of claim 1, wherein the chuck supportcolumn includes a column-shaped portion and a bowl-shaped portion,wherein the side wall surrounds the bowl-shaped portion of the chucksupport column, wherein the column-shaped portion of the chuck supportcolumn is configured to extend from outside the plasma chamber to intothe plasma chamber.
 6. The plasma chamber of claim 1, wherein the chucksupport column includes a column-shaped portion, the plasma chamberfurther comprising a dielectric located on top of the column-shapedportion of the chuck support column, wherein the lower electrode isplaced on top of the dielectric.
 7. The plasma chamber of claim 1,wherein the transition flange includes an inner bottom surface and anouter bottom surface, wherein the inner bottom surface faces theenclosure, wherein the outer bottom surface faces an outside of theplasma chamber, wherein the transition flange opening extends from theinner bottom surface to the outer bottom surface.
 8. The plasma chamberof claim 1, wherein the chuck support column is configured to extendfrom outside the plasma chamber to inside the plasma chamber via thetransition flange opening, the plasma chamber further comprising anupper electrode assembly, wherein the upper electrode assembly isconfigured to fit on top of the side wall.
 9. The plasma chamber ofclaim 1, wherein the bowl-shaped portion is configured to be coupled tothe lower electrode, wherein the column-shaped portion is configured tobe coupled to an RF rod of an RF transmission line.
 10. The plasmachamber of claim 1, wherein the bowl-shaped portion has a greaterdiameter than that of the column-shaped portion.
 11. The plasma chamberof claim 1, wherein the bowl-shaped portion and the column-shapedportion are configured to move in a vertical direction.
 12. A radiofrequency (RF) rod comprising: a bowl-shaped portion, wherein the bowl-shaped portion is configured to be located inside an enclosure of aplasma chamber; and a column-shaped portion located below thebowl-shaped portion, wherein the column-shaped portion is configured toextend via a transition flange opening in a bottom wall of the plasmachamber.
 13. The RF rod of claim 12, wherein the bowl-shaped portion isconfigured to be coupled to a lower electrode of the plasma chamber,wherein the column-shaped portion is configured to be coupled to an RFrod of a transmission line.
 14. The RF rod of claim 12, wherein thebowl-shaped portion has a hollow space and the column-shaped portion hasa hollow space, wherein the bowl-shaped portion has a greater diameterthan that of the column-shaped portion.
 15. The RF rod of claim 12,wherein the column-shaped portion has a cross-sectional shape of acolumn and the bowl-shaped portion has a cross-sectional shape of abowl.
 16. The RF rod of claim 12, wherein the bowl-shaped portion has ahollow space, wherein the hollow space of the bowl is configured toreceive a gas supply line, a thermocouple line, and an alternatingcurrent (AC) supply line.
 17. The RF rod of claim 12, wherein thebowl-shaped portion and the column-shaped portion are configured to movein a vertical direction.
 18. A method for delivery of radio frequency(RF) power, comprising: receiving an RF signal at a column-shapedportion of the RF rod, wherein the column-shaped portion extends via anopening from outside a plasma chamber to into the plasma chamber;transferring the RF signal via the column-shaped portion and abowl-shaped portion of the RF rod, wherein the bowl-shaped portion islocated inside an enclosure of the plasma chamber; and supplying the RFsignal from the bowl-shaped portion to a lower electrode of the plasmachamber.
 19. The method of claim 18, further comprising: transferringpower of the RF signal from the lower electrode to a gap within theplasma chamber to form plasma within the gap; receiving a return RFsignal at a bowl-shaped portion of a chuck support column, wherein thereturn RF signal is received from the plasma, wherein the bowl-shapedportion of the chuck support column is located inside the plasmachamber; and transferring the return RF signal to a column-shapedportion of the chuck support column
 20. The method of claim 19, whereinthe RF signal is received from an RF rod of a transmission line, themethod further comprising transferring the return RF signal from thecolumn-shaped portion of the chuck support column to an RF sheath of theRF transmission line.